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crg40t60an3h.pdf datasheet:

crg40t60an3hcrg40t60an3h

Silicon FS Trench IGBT CRG40T60AN3H General Description VCES 650 V Using HUAJING's proprietary trench design and advanced Field IC 40 A Stop (FS) technology, offering superior conduction and switching 280 W Ptot TC=25VCE(sat) 1.9 V performances. RoHS Compliant. TO- 3PN Features FS Trench Technology, Positive temperature coefficient Low saturation voltage VCE(sat),TYP=1.9V @IC=40A,VGE=15V Applications Welding Frequency Converter Inverter UPS Package Parameters Type Marking Package Packing CRG40T60AN3H G40T60AN3H TO-3PN Tube WU XI CHI NA RE SO UR CE S HUAJ I NG MIC ROELECT R ONIC S C O. , LT D. P a g e 1 of9 2022V01 CRG40T60AN3H Absolute Maximum RatingsTC= 25 unless otherwise specified Symbol Parameter Rating Units VCES Collector-Emitter Voltage 650 V Gate- Emitter Voltage

 

Keywords - ALL TRANSISTORS DATASHEET

 crg40t60an3h.pdf Design, MOSFET, Power

 crg40t60an3h.pdf RoHS Compliant, Service, Triacs, Semiconductor

 crg40t60an3h.pdf Database, Innovation, IC, Electricity

 

 
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