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crg60t60an3h.pdf datasheet:

crg60t60an3hcrg60t60an3h

Silicon FS Trench IGBT CRG60T60AN3H General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field IC 60 A Stop (FS) technology, offering superior conduction and switching 403 W Ptot TC=25VCE(sat) 1.85 V performances. RoHS Compliant. Features FS Trench Technology, Positive temperature coefficient Low saturation voltage VCE(sat),TYP=1.85V @IC=60A,VGE=15V Applications Welding Solar Inverter UPS Package Parameters Type Marking Package Packing CRG60T60AN3H G60T60AN3H TO-3PN Tube Absolute Maximum RatingsTC= 25 unless otherwise specified Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGES Gate- Emitter Voltage V 20 Collector Current @TC = 25 C 120 IC A Collector Current @TC = 100 60 C ICMa1 Pulsed Collector Current @TC

 

Keywords - ALL TRANSISTORS DATASHEET

 crg60t60an3h.pdf Design, MOSFET, Power

 crg60t60an3h.pdf RoHS Compliant, Service, Triacs, Semiconductor

 crg60t60an3h.pdf Database, Innovation, IC, Electricity

 

 
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