crg60t60an3h.pdf datasheet:
Silicon FS Trench IGBT CRG60T60AN3H General Description VCES 600 V Using HUAJING's proprietary trench design and advanced Field IC 60 A Stop (FS) technology, offering superior conduction and switching 403 W Ptot TC=25VCE(sat) 1.85 V performances. RoHS Compliant. Features FS Trench Technology, Positive temperature coefficient Low saturation voltage VCE(sat),TYP=1.85V @IC=60A,VGE=15V Applications Welding Solar Inverter UPS Package Parameters Type Marking Package Packing CRG60T60AN3H G60T60AN3H TO-3PN Tube Absolute Maximum RatingsTC= 25 unless otherwise specified Symbol Parameter Rating Units VCES Collector-Emitter Voltage 600 V VGES Gate- Emitter Voltage V 20 Collector Current @TC = 25 C 120 IC A Collector Current @TC = 100 60 C ICMa1 Pulsed Collector Current @TC
Keywords - ALL TRANSISTORS DATASHEET
crg60t60an3h.pdf Design, MOSFET, Power
crg60t60an3h.pdf RoHS Compliant, Service, Triacs, Semiconductor
crg60t60an3h.pdf Database, Innovation, IC, Electricity



Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: GA1A4M | SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550
Popular searches
irfz44n | irf3205 | irfz44n datasheet | 2n4401 | bc547 transistor | bd139 | 2n4401 datasheet