cs4n60a3hd.pdf datasheet:

Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS4N60 A3HD General Description VDSS 600 V CS4N60 A3HD, the silicon N-channel Enhanced ID 4 A PD(TC=25) 75 W VDMOSFETs, is obtained by the self-aligned planar Technology RDS(ON)Typ 1.8 which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-251, which accords with the RoHS standard. Features Fast Switching ESD Improved Capability Low Gate Charge (Typical Data: 14.5nC) Low Reverse transfer capacitances(Typical: 8.5pF) 100% Single Pulse avalanche energy Test Applications Power switch circuit of adaptor and charger. AbsoluteTc= 25 unless otherwise specified Symbol Paramete