d965v.pdf datasheet:

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO 92 D965V TRANSISTOR (NPN) 1.EMITTER FEATURES 2.COLLECTOR General Purpose Switching and Amplification. 3.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 22 V VCEO Collector-Emitter Voltage 15 V VEBO Emitter-Base Voltage 6 V IC Collector Current 5 A PC Collector Power Dissipation 750 mW RJA Thermal Resistance From Junction To Ambient 166 /W TJ Junction Temperature 150 Tstg Storage Temperature -55~+150 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 1mA,IE=0 22 VCollector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 15 VEmitter-base breakdown voltage V(BR)EB