fdd5n50.pdf datasheet:

December 2007UniFETTMFDD5N50tmN-Channel MOSFET 500V, 4A, 1.4Features Description RDS(on) = 1.15 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Fast switching performance, and withstand high energy pluse in the avalanche 100% avalanche testedand commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power Improved dv/dt capabilityfactor correction. RoHS compliantDDGGSD-PAKSMOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter Ratings UnitsVDSS Dr