fdd5n50f.pdf datasheet:

December 2007UniFETTMFDD5N50FtmN-Channel MOSFET, FRFET 500V, 3.5A, 1.55Features Description RDS(on) = 1.25 ( Typ.)@ VGS = 10V, ID = 1.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Fast switching performance, and withstand high energy pluse in the avalanche 100% avalanche testedand commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power factor- Improved dv/dt capabilitycorrection. RoHS compliantDDGGSD-PAKSMOSFET Maximum Ratings TC = 25oC unless otherwise noted* Symbol Parameter Ratings