fdd5n53 fdu5n53.pdf datasheet:

January 2009UniFETTMFDD5N53/FDU5N53tmN-Channel MOSFET 530V, 4A, 1.5Features Description RDS(on) = 1.25 ( Typ.)@ VGS = 10V, ID = 2A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 11nC)stripe, DMOS technology. Low Crss ( Typ. 5pF)This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Fast switching performance, and withstand high energy pluse in the avalanche 100% avalanche testedand commutation mode. These devices are well suited for high efficient switched mode power suppliesand active power Improved dv/dt capabilityfactor correction. RoHS compliantDDGGSI-PAKD-PAK G SDFDD SeriesFDU SeriesSMOSFET Maximum Ratings TC = 25oC unless otherwise noted