fdd6n20tf.pdf datasheet:

May 2007UniFETTMFDD6N20TMtmN-Channel MOSFET 200V, 4.5A, 0.8Features Description RDS(on) = 0.6 ( Typ. )@ VGS = 10V, ID = 2.3A These N-Channel enhancement mode power field effect transistors are produced using Fairchilds proprietary, planar Low gate charge ( Typ. 4.7nC )stripe, DMOS technology. Low Crss ( Typ. 6.3pF )This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Fast switchingperformance, and withstand high energy pulse in the avalanche 100% avalanche testedand commutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor Improved dv/dt capabilitycorrection. RoHS compliantDDGGSI-PAKG SDD-PAKFDU SeriesFDD SeriesSMOSFET Maximum Ratings TC = 25oC unless otherwise not