fdms030n06b.pdf datasheet:

November 2013FDMS030N06BN-Channel PowerTrench MOSFET60 V, 100 A, 3 mFeatures Description RDS(on) = 2.4 m (Typ.) @ VGS = 10 V, ID = 50 A This N-Channel MOSFET is produced using Fairchild Advanced Package and Silicon Combination for Low RDS(on) Semiconductors advance PowerTrench process that hasand High Efficiency been tailored to minimize the on-state resistance while main-taining superior switching performance. Fast Switching Speed 100% UIL TestedApplications RoHS Compliant Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor drives and Uninterruptible Power Supplies Renewable systemTop Bottom Pin 1SGD 5 4SSGSD 6 3SD 7 2DDSD D 8 1DPower 56MOSFET Maximum Ratings TC = 25oC unless otherwise noted.Symbol Parameter FDMS030N06B UnitVDSS Drain t