fdpf085n10a.pdf datasheet:

isc N-Channel MOSFET Transistor FDPF085N10AFEATURESWith TO-220F packagingDrain Source Voltage-: V 100VDSSStatic drain-source on-resistance:RDS(on) 8.5m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gate-Source Voltage 20 VGSSI Drain Current-Continuous;@Tc=25 40 ADI Drain Current-Single Pulsed 160 ADMP Total Dissipation 33.3 WDT Operating Junction Temperature -55~175 jStorage Temperature -55~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNIT/WRth(ch-c) Channel-to-case thermal resistance 4.51isc websitewww.iscsemi.cn isc & iscsemi is registered trademark

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