fds4435a.pdf datasheet:

October 2001FDS4435AP-Channel Logic Level PowerTrench MOSFET General DescriptionFeaturesThis P-Channel Logic Level MOSFET is produced using -9 A, -30 V. RDS(ON) = 0.017 W @ VGS = -10 VFairchild Semiconductors advanced PowerTrench processRDS(ON) = 0.025 W @ VGS = -4.5 Vthat has been especially tailored to minimize the on-stateresistance and yet maintain low gate charge for superior Low gate charge (21nC typical).switching performance. High performance trench technology for extremelyThese devices are well suited for notebook computer appli-low RDS(ON).cations: load switching and power management, battery High power and current handling capability.charging circuits, and DC/DC conversion.DD5 4DD637 2GS8 1SSO-8 SAbsolute Maximum Ratings TA = 25C unless otherwise notedSymbol Parameter Ratings UnitsVDSS Dr