fir4n60lg.pdf datasheet:

FIR4N60LGAdvanced N-Ch Power MOSFETPIN Connection TO-252(D-PAK)General DescriptionFIR4N60LG is an N-channel enhancement mode powerMOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The1improved planar stripe cell and the improved guard ring 3terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation 2mode. --These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers. 13Features 4A,600V,RDS(on) typ=2.0 @VGS=10V Low gate charge Marking Diagram Low Crss Fast switching YAWWY = YearFIR4N60L Improved dv/dt capability A = Assembly LocationWW = Work Week= Specific Device CodeFIR4N60L un