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fqd1n60tf fqd1n60tm fqu1n60tu.pdf datasheet:

fqd1n60tf_fqd1n60tm_fqu1n60tufqd1n60tf_fqd1n60tm_fqu1n60tu

April 2000TMQFETQFETQFETQFETFQD1N60 / FQU1N60600V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 1.0A, 600V, RDS(on) = 11.5 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 5.0 nC)planar stripe, DMOS technology. Low Crss ( typical 3.0 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supply.DDG D-PAK I-PAKGSFQD Series G FQU SeriesD SSAbsolute Maximum Ratings TC = 25C unless otherwise notedSymbol Parameter FQD1N60 / FQU1N60 Units

 

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 fqd1n60tf fqd1n60tm fqu1n60tu.pdf Design, MOSFET, Power

 fqd1n60tf fqd1n60tm fqu1n60tu.pdf RoHS Compliant, Service, Triacs, Semiconductor

 fqd1n60tf fqd1n60tm fqu1n60tu.pdf Database, Innovation, IC, Electricity

 

 
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