fqd6n25tf fqd6n25tm fqd6n25 fqu6n25.pdf datasheet:

October 2008QFETFQD6N25 / FQU6N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.4A, 250V, RDS(on) = 1.0 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.6 nC)planar stripe, DMOS technology. Low Crss ( typical 7.5 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are well RoHS Compliant suited for high efficiency switching DC/DC converters,switch mode power supply.DD G D-PAK I-PAKGSFQD Series G FQU SeriesD S SAbsoIute Maximum Ratings T = 25C unless otherwise notedSy