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fqd6n40tf fqd6n40tm.pdf datasheet:

fqd6n40tf_fqd6n40tmfqd6n40tf_fqd6n40tm

April 2000TMQFETQFETQFETQFETFQD6N40 / FQU6N40400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 4.2A, 400V, RDS(on) = 1.15 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 13 nC)planar stripe, DMOS technology. Low Crss ( typical 9.5 pF)This advanced technology has been especially tailored to Fast switchingminimize on-state resistance, provide superior switching 100% avalanche testedperformance, and withstand high energy pulse in the Improved dv/dt capabilityavalanche and commutation mode. These devices are wellsuited for high efficiency switch mode power supply,electronic lamp ballast based on half bridge.DD G D-PAK I-PAKGSFQD Series G FQU SeriesD S SAbsoIute Maximum Ratings TC = 25C unless othe

 

Keywords - ALL TRANSISTORS DATASHEET

 fqd6n40tf fqd6n40tm.pdf Design, MOSFET, Power

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 fqd6n40tf fqd6n40tm.pdf Database, Innovation, IC, Electricity

 

 
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