fqd6n60c.pdf datasheet:

QFETFQD6N60C600V N-Channel MOSFETFeatures Description 4 A, 600 V, RDS(on) = 2.0 @ VGS = 10 V These N-Channel enhancement mode power field effecttransistors are produced using Fairchilds proprietary, planar Low gate charge ( typical 16 nC )stripe, DMOS technology.This advanced technology has been especially tailored to Low Crss ( typical 7 pF)minimize on-state resistance, provide superior switching Fast switchingperformance, and withstand high energy pulse in the avalancheand commutation mode. These devices are well suited for high 100 % avalanche testedefficiency switched mode power supplies, active power factor Improved dv/dt capabilitycorrection, electronic lamp ballasts based on half bridgetopology.DD