fqpf9n50cf.pdf datasheet:

December 2005TMFRFETFQPF9N50CF500V N-Channel MOSFETFeatures Description 9A, 500V, RDS(on) = 0.85 @VGS = 10 V These N-Channel enhancement mode power field effect transis-tors are produced using Fairchilds proprietary, planar stripe, Low gate charge (typical 28 nC)DMOS technology. Low Crss (typical 24pF)This advanced technology has been especially tailored to mini- Fast switching mize on-state resistance, provide superior switching perfor-mance, and withstand high energy pulse in the avalanche and 100% avalanche testedcommutation mode. These devices are well suited for high effi- Improved dv/dt capability ciency switched mode power supplies, active power factor cor-rection, electronic lamp ballasts based on half bridge topology. Fast recovery body diode (typical 100ns)DGTO-220FG D SFQPF SeriesSAbsolute Maximum