ftc945b.pdf datasheet:

SEMICONDUCTORFTC945BTECHNICAL DATANPN TRANSISTOR B CFEATURE Excellent hFE linearity DIM MILLIMETERS Low noise A 4.70 MAXEB 4.80 MAXG Complementary to FTA733B C 3.70 MAXDD 0.55 MAXE 1.00MAXIMUM RATINGS (Ta=25 unless otherwise noted) F 1.27G 0.85H 0.45Symbol Parameter Value Units_HJ 14.00 + 0.50L 2.30F FVCBO Collector-Base Voltage 60 V M 0.51 MAXVCEO Collector-Emitter Voltage 50 V 1 2 3 1. EMITTER2. BASEVEBO Emitter-Base Voltage 5 V 3. COLLECTORIC Collector Current -Continuous 150 mA PC Collector Power Dissipation 400 mWTO-92TJ Junction Temperature 125 Tstg Storage Temperature -55-125 ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) Parameter Symbol Test conditions Min Typ Max UnitCollector-base breakdown voltage V(BR)CBO IC=1mA , IE=0 60 V Collector-emitter breakdown volta