gmm3x160-0055x2-smd.pdf datasheet:

GMM 3x160-0055X2 VDSS = 55 VThree phase full BridgeID25 = 150 Awith Trench MOSFETsRDSon typ. = 2.2 mWin DCB isolated high current packageL1+ L2+ L3+G1 G3 G5S1 S3 S5L1 L2 L3G2 G4 G6S2 S4 S6L1- L2- L3-ApplicationsMOSFETsAC drivesSymbol Conditions Maximum Ratings in automobilesVDSS TVJ = 25C to 150C 55 V - electric power steering VGS 20 V - starter generator in industrial vehiclesID25 TC = 25C 150 A - propulsion drivesID90 TC = 90C 115 A - fork lift drives in battery supplied equipmentIF25 TC = 25C (diode) 140 AIF90 TC = 90C (diode) 90 AFeatures MOSFETs in trench technology:Symbol Conditions Characteristic Values - low RDSon(TVJ = 25C, unless otherwise specified) - optimized intrinsic reverse diodemin. typ. max. package: - high level of integrationRDSon 1) on chip level at TVJ =