gsm4435s.pdf datasheet:

GSM4435S GSM4435S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435S, P-Channel enhancement mode -30V/-9A,RDS(ON)=18m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)=26m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low SOP-8P package design voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Applications LED Display Load Switch CCFL Inverter Power Management in Notebook Computer Packages & Pin Assignments GSM4435SSF(SOP-8P) 58 7 6DD D D1 2 3 4S S S GPin Pin Name Pin Pin Name1 Source 5 Drain 2 Source 6 Drain 3 Source 7 Drain 4 Gate 8 Drain 1 www.gs-power.comGSM4435SOrdering Information P