gsm4435w.pdf datasheet:

GSM4435W 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435W, P-Channel enhancement mode -30V/-10A,RDS(ON)=24m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)=35m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low SOP-8P package design voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Applications LED Display Load Switch CCFL Inverter Power Management in Notebook Computer Packages & Pin Assignments GSM4435WSF(SOP-8P) Pin Description Pin Description1 Source 5 Drain 2 Source 6 Drain 3 Source 7 Drain 4 Gate 8 Drain www.gs-power.com 1 GSM4435WOrdering Information GS P/NGSM4435W S FPackage CodeHalogen