gsm4435ws.pdf datasheet:
GSM4435WS GSM4435WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4435WS, P-Channel enhancement mode -30V/-9A,RDS(ON)= 17m@VGS=-10V MOSFET, uses Advanced Trench Technology to -30V/-7A,RDS(ON)= 24m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low SOP8P package design voltage power management, and low in-line power loss are needed in commercial industrial surface mount applications. Applications LED Display Load Switch CCFL Inverter Power Management in Notebook Computer Packages & Pin Assignments GSM4435WSSF(SOP- 8P) 58 7 6DD D D1 2 3 4S S S G1 Source 5 Drain 2 Source 6 Drain 3 Source 7 Drain 4 Gate 8 Drain 1 www.gs-power.comGSM4435WSOrdering Information Part Number Packag
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