h4435s.pdf datasheet:

Spec. No. : MOS200101) HI-SINCERITY Issued Date : 2008.01.12 Revised Date :2009.02.06 MICROELECTRONICS CORP. Page No. : 1/5 H4435S 8-Lead Plastic SO-8 Package Code: S P-Channel Enhancement-Mode MOSFET (-30V, -9.1A) H4435S Symbol & Pin Assignment Features 5 4Pin 1 / 2 / 3: Source 6 3Pin 4: Gate 7 2 RDS(on)=20m@VGS=-10V, ID=-9.1A Pin 5 / 6 / 7 / 8: Drain 8 1 RDS(on)=35m@VGS=-4.5V, ID=-6.9A Advanced trench process technology High Density Cell Design for Ultra Low On-Resistance Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol Parameter Ratings UnitsVDS Drain-Source Voltage -30 VVGS Gate-Source Voltage 20 V ID Drain Current (Continuous) -9.1 A IDM Drain Current (Pulsed) *1 -50 APD Total Power Dissipation @TA=25oC 2.5 WTj, Tstg Operating and Storage Temperature Range -55 to +150 C RJA