hfs4n60.pdf datasheet:

July 2005BVDSS = 600 VRDS(on) typ HFS4N60ID = 4.0 A600V N-Channel MOSFETTO-220FFEATURES1 Originative New Design23 Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 15 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) GS=10V 100% Avalanche TestedAbsolute Maximum Ratings TC=25 unless otherwise specifiedSymbol Parameter Value UnitsVDSS Drain-Source Voltage 600 VID Drain Current Continuous (TC = 25 ) 4.0* ADrain Current Continuous (TC = 100 ) 2.5* AIDM Drain Current Pulsed (Note 1) 16* AVGS Gate-Source Voltage 30 VEAS Single Pulsed Avalanche Energy (Note 2) 240 mJIAR Avalanche Current (Note 1) 4.0 AEAR Repetitive Avalanche Energy (Note 1) 10 mJdv/dt Peak