hfs4n60fs.pdf datasheet:

Oct 2016HFS4N60FS600V N-Channel MOSFETFeatures Key ParametersParameter Value Unit Originative New DesignBVDSS 600 V Very Low Intrinsic CapacitancesID 4A Excellent Switching CharacteristicsRDS(on), Typ 2.6 100% Avalanche TestedQg, Typ 8.5 nC Single Gauge PackageTO-220FS SymbolSDGAbsolute Maximum Ratings TC=25 unless otherwise specifiedSymbol Parameter Value UnitVDSS Drain-Source Voltage 600 VDrain Current Continuous (TC = 25 ) 4.0 * AIDDrain Current Continuous (TC = 100 ) 2.5 * AIDM Drain Current Pulsed (Note 1) 16 * AVGS Gate-Source Voltage 30 VEAS Single Pulsed Avalanche Energy (Note 2) 70 mJIAR Avalanche Current (Note 1) 4.0 AEAR Repetitive Avalanche Energy (Note 1) 11 mJdv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns35 WPower Dissipation (TC = 25 )PD - Derate above 25 0.28 W/ TJ, TSTG Operat