hfw10n60s.pdf datasheet:

May 2010BVDSS = 600 VRDS(on) typ HFW10N60SID = 9.5 A600V N-Channel MOSFETD2-PAKFEATURES Originative New Design Superior Avalanche Rugged Technology1.Gate 2. Drain 3. Source Robust Gate Oxide Technology Very Low Intrinsic Capacitances Excellent Switching Characteristics Unrivalled Gate Charge : 29 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) GS=10V 100% Avalanche Tested Absolute Maximum Ratings TC=25 unless otherwise specifiedSymbol Parameter Value UnitsVDSS Drain-Source Voltage 600 VID Drain Current Continuous (TC = 25 ) 9.5 ADrain Current Continuous (TC = 100 ) 5.7 AIDM Drain Current Pulsed (Note 1) 38 AVGS Gate-Source Voltage 30 VEAS Single Pulsed Avalanche Energy (Note 2) 700 mJIAR Avalanche Current (Note 1) 9.5 AEAR Repetitive Avalanche Energy (Note 1) 15.6 mJdv/dt Peak Diode