hgtg20n60a4d.pdf datasheet:

HGTG20N60A4DData Sheet February 2009600V, SMPS Series N-Channel IGBT with FeaturesAnti-Parallel Hyperfast Diode >100kHz Operation At 390V, 20AThe HGTG20N60A4D is a MOS gated high voltage switching 200kHz Operation At 390V, 12Adevice combining the best features of MOSFETs and bipolar 600V Switching SOA Capabilitytransistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar Typical Fall Time . . . . . . . . . . . . . . . . 55ns at TJ = 125oCtransistor. The much lower on-state voltage drop varies only Low Conduction Lossmoderately between 25oC and 150oC. The IGBT used is the development type TA49339. The diode used in anti-parallel Temperature Compensating SABER Modelis the development type TA49372. www.fairchildsemi.comThis IGBT is ideal for many high voltage switching P