hgtg20n60b3d.pdf datasheet:

HGTG20N60B3DData Sheet December 200140A, 600V, UFS Series N-Channel IGBT Featureswith Anti-Parallel Hyperfast Diode 40A, 600V at TC = 25oCThe HGTG20N60B3D is a MOS gated high voltage Typical Fall Time. . . . . . . . . . . . . . . . . . . . 140ns at 150oCswitching device combining the best features of MOSFETs Short Circuit Ratedand bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction Low Conduction Lossloss of a bipolar transistor. The much lower on-state voltage Hyperfast Anti-Parallel Diodedrop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRP3060.PackagingThe IGBT is ideal for many high voltage switching JEDEC STYLE TO-247applications operating at moderate frequencies where low Econduction losses are essential.CG