hgtg30n60a4d.pdf datasheet:

HGTG30N60A4DData Sheet September 2004600V, SMPS Series N-Channel IGBT with FeaturesAnti-Parallel Hyperfast Diode >100kHz Operation At 390V, 30AThe HGTG30N60A4D is a MOS gated high voltage 200kHz Operation At 390V, 18Aswitching devices combining the best features of MOSFETs 600V Switching SOA Capabilityand bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction Typical Fall Time. . . . . . . . . . . . . . . . . 60ns at TJ = 125oCloss of a bipolar transistor. The much lower on-state voltage Low Conduction Lossdrop varies only moderately between 25oC and 150oC. The IGBT used is the development type TA49343. The diode Temperature Compensating SABER Modelused in anti-parallel is the development type TA49373. www.fairchildsemi.comThis IGBT is ideal for many high voltage switching