hgtp3n60.pdf datasheet:

HGTP3N60C3D, HGT1S3N60C3D,S E M I C O N D U C T O RHGT1S3N60C3DS6A, 600V, UFS Series N-Channel IGBTwith Anti-Parallel Hyperfast DiodeMay 1996Features PackagingJEDEC TO-220AB 6A, 600V at TC = +25oCEMITTERCOLLECTOR 600V Switching SOA CapabilityGATE Typical Fall Time - 130ns at TJ = +150oCCOLLECTOR (FLANGE) Short Circuit Rating Low Conduction Loss Hyperfast Anti-Parallel DiodeDescriptionJEDEC TO-262AAEMITTERThe HGTP3N60C3D, HGT1S3N60C3D, and HGT1S3N60C3DSCOLLECTORGATEare MOS gated high voltage switching devices combining the COLLECTOR(FLANGE)best features of MOSFETs and bipolar transistors. Thesedevices have the high input impedance of a MOSFET and thelow on-state conduction loss of a bipolar transistor. The muchlower on-state voltage drop varies only moderately between+25oC and +150oC. The IGBT used is the dev