hm4n60 hm4n60f.pdf datasheet:

HM4N60 / HM4N60FHM4N60 / HM4N60F600V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using SL semis 4.5A, 600V, RDS(on) = 2.50 @VGS = 10 Vadvanced planar stripe DMOS technology. Low gate charge ( typical 16nC)This advanced technology has been especially tailored to High ruggednessminimize on-state resistance, provide superior switching Fast switchingperformance, and withstand high energy pulse in the 100% avalanche testedavalanche and commutation mode. These devices are well Improved dv/dt capabilitysuited for high efficiency switched mode power supplies,active power factor correction based on half bridgetopology.D G TO-220 TO-220FG DSG D S SAbsolute Maximum Ratings TC = 25Cunless otherwise notedSymbol Parameter HM4N60