hn1a01fu.pdf datasheet:

SMD Type Transistors PNP TransistorsHN1A01FU (KN1A01FU ) Features High voltage and high current High hFE: hFE = 120~400 Excellent hFE linearity Small package (Dual type) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltage VEBO -5 Collector Current - Continuous IC -150mA Base current IB -30 Collector Power Dissipation PC 200 mW Junction Temperature TJ 125 Storage Temperature range Tstg -55 to 125 Electrical Characteristics Ta = 25Parameter Symbol Test Conditions Min Typ Max Unit Collector- base breakdown voltage VCBO Ic= -100 A IE=0 -50 Collector- emitter breakdown voltage VCEO Ic= -1 mA IB=0 -50 V Emitter - base breakdown voltage VEBO IE= -100A IC=0 -5 Collector-base cut-off current IC