hrd120n10k hru120n10k.pdf datasheet:

Sep 2015BVDSS = 100 VRDS(on) typ = 10 HRD120N10K / HRU120N10K ID = 73 A100V N-Channel Trench MOSFETD-PAK I-PAKFEATURES21 Originative New Design13 23 Superior Avalanche Rugged TechnologyHRD120N10K HRU120N10K Excellent Switching Characteristics1.Gate 2. Drain 3. Source Unrivalled Gate Charge : 65 nC (Typ.) Extended Safe Operating Area Lower RDS(ON) : 10 (Typ.) @VGS=10V 100% Avalanche TestedAbsolute Maximum Ratings TC=25 unless otherwise specifiedSymbol Parameter Value UnitsVDSS Drain-Source Voltage 100 VDrain Current Continuous (TC = 25 ) 73 * AIDDrain Current Continuous (TC = 100 ) 51 * AIDM Drain Current Pulsed (Note 1) 200 * AVGS Gate-Source Voltage 25 VEAS Single Pulsed Avalanche Energy (Note 2) 265 mJEAR Repetitive Avalanche Energy (Note 1) 11 mJPower Dissipation (TA = 25 )* 3 WPDPower Dissip