hsm4435.pdf datasheet:

HSM4435 P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The HSM4435 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 18 m gate charge for most of the synchronous buck converter applications. ID -9.5 A The HSM4435 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. SOP8 Pin Configuration 100% EAS Guaranteed Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 20 V ID@TA=25 Continuous Drain Current, VGS @ -10V1 -9.5 A ID@TA=70 Continuous Drain Current, VGS @ -10V1 -7.6 A IDM Pulsed Drain Current2 -50 A EAS