hss2300a.pdf datasheet:

HSS2300A N-Ch 20V Fast Switching MOSFETs Description Product Summary VDS 20 V The HSS2300A is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON RDS(ON),max 26 m and efficiency for most of the small power switching and load switch applications. ID 6 A The HSS2300A meet the RoHS and Green Product requirement with full function reliability approved. SOT23 Pin Configuration l Green Device Available l Super Low Gate Charge l Excellent Cdv/dt effect decline l Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 20 V VGS Gate-Source Voltage 12 V ID@TA=25 Continuous Drain Current, VGS @ 4.5V1 6.0 A ID@TA=70 Continuous Drain Current, VGS @ 4.5V1 5.0 A IDM Pulsed Drain Current2 17 A PD@TA=25 Total Power Dissipation3 1 W PD@TA=70 To