hss2306a.pdf datasheet:

HSS2306A N-Ch 30V Fast Switching MOSFETs Description Product Summary The HSS2306A is the high cell density trenched N-VDS 30 V ch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching RDS(ON),typ 27 m and load switch applications. The HSS2306A meet the RoHS and Green Product ID 4.6 A requirement with full function reliability approved. SOT23 Pin Configuration Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 V ID@TA=25 Continuous Drain Current, VGS @ 10V1 4.6 A ID@TA=70 Continuous Drain Current, VGS @ 10V1 3.7 A IDM Pulsed Drain Current2 18.4 A PD@TA=25 Total Power Dissipation3 1 W TS