hss2307a.pdf datasheet:

HSS2307A P-Ch 30V Fast Switching MOSFETs Product Summary Description The HSS2307A is the high cell density trenched P-VDS -30 V ch MOSFETs, which provides excellent RDSON RDS(ON),typ 43 m and efficiency for most of the small power switching and load switch applications. ID -3.2 A The HSS2307A meet the RoHS and Green Product requirement with full function reliability approved. SOT23s Pin Configuration Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Rating Symbol Parameter Units 10s Steady State VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 20 V ID@TA=25 Continuous Drain Current, VGS @ -10V1 -3.6 -3.2 A ID@TA=70 Continuous Drain Current, VGS @ -10V1 -2.9 -2.5 A IDM Pulsed Drain Current2 -13 A PD@TA=2