hss2308a.pdf datasheet:

HSS2308A N-Ch 60V Fast Switching MOSFETs Product Summary Description VDS 60 V The HSS2308A is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON RDS(ON),max 100 m and efficiency for most of the small power switching and load switch applications. ID 2.3 A The HSS2308A meet the RoHS and Green Product requirement with full function reliability approved. SOT23 Pin Configuration Green Device Available Super Low Gate Charge Excellent CdV/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 20 V ID@TA=25 Continuous Drain Current, VGS @ 10V1 2.3 A ID@TA=70 Continuous Drain Current, VGS @ 10V1 1.8 A IDM Pulsed Drain Current2 9.2 A PD@TA=25 Total Power Dissipation3 1 W TS