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hsw2n15.pdf datasheet:

hsw2n15hsw2n15

HSW2N15 N-Ch 150V Fast Switching MOSFETs Description Product Summary V 150 V DSThe HSW2N15 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and R 380 m DS(ON),typgate charge for most of the synchronous buck converter applications. I 1.4 A DThe HSW2N15 meet the RoHS and Green Product requirement with full function reliability approved. Green Device Available SOT23-6L Pin Configuration Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units V Drain-Source Voltage 150 V DSV Gate-Source Voltage 20 V GSI =25 Continuous Drain Current, V @ 10V1 1.4 A D@T GSCI =100 Continuous Drain Current, V @ 10V1 0.88 A D@T GSCI Pulsed Drain Current2 5.6 A DMP =25 Total Power Dissipa

 

Keywords - ALL TRANSISTORS DATASHEET

 hsw2n15.pdf Design, MOSFET, Power

 hsw2n15.pdf RoHS Compliant, Service, Triacs, Semiconductor

 hsw2n15.pdf Database, Innovation, IC, Electricity

 

 
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