hsw2n15.pdf datasheet:

HSW2N15 N-Ch 150V Fast Switching MOSFETs Description Product Summary V 150 V DSThe HSW2N15 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and R 380 m DS(ON),typgate charge for most of the synchronous buck converter applications. I 1.4 A DThe HSW2N15 meet the RoHS and Green Product requirement with full function reliability approved. Green Device Available SOT23-6L Pin Configuration Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units V Drain-Source Voltage 150 V DSV Gate-Source Voltage 20 V GSI =25 Continuous Drain Current, V @ 10V1 1.4 A D@T GSCI =100 Continuous Drain Current, V @ 10V1 0.88 A D@T GSCI Pulsed Drain Current2 5.6 A DMP =25 Total Power Dissipa