huf75307t3st.pdf datasheet:

HUF75307T3STData Sheet December 20012.6A, 55V, 0.090 Ohm, N-Channel UltraFET FeaturesPower MOSFET 2.6A, 55VThis N-Channel power MOSFET is Ultra Low On-Resistance, rDS(ON) = 0.090manufactured using the innovative Diode Exhibits Both High Speed and Soft RecoveryUltraFET process. This advanced process technology achieves the Temperature Compensating PSPICE Modellowest possible on-resistance per silicon area, resulting in Thermal Impedance SPICE Modeloutstanding performance. This device is capable of withstanding high energy in the avalanche mode and the Peak Current vs Pulse Width Curvediode exhibits very low reverse recovery time and stored UIS Rating Curvecharge. It was designed for use in applications where power Related Literatureefficiency is important, such as switching regulators, switching converter