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hufa75307d3st hufa75307p3 hufa75307d3 hufa75307d3s.pdf datasheet:

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HUFA75307P3, HUFA75307D3, HUFA75307D3SData Sheet December 200115A, 55V, 0.090 Ohm, N-Channel UltraFET FeaturesPower MOSFETs 15A, 55VThese N-Channel power MOSFETs Simulation Modelsare manufactured using the - Temperature Compensated PSPICE and SABER innovative UltraFET process. This Modelsadvanced process technology - SPICE and SABER Thermal Impedance Models achieves the lowest possible on-resistance per silicon area, Available on the WEB at: www.fairchildsemi.comresulting in outstanding performance. This device is capable Peak Current vs Pulse Width Curveof withstanding high energy in the avalanche mode and the diode exhibits very low reverse recovery time and stored UIS Rating Curvecharge. It was designed for use in applications where power Related Literature efficiency is important, such as switching regulators,

 

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 hufa75307d3st hufa75307p3 hufa75307d3 hufa75307d3s.pdf Design, MOSFET, Power

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 hufa75307d3st hufa75307p3 hufa75307d3 hufa75307d3s.pdf Database, Innovation, IC, Electricity

 

 
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