ipb108n15n3-g ipp111n15n3-g ipi111n15n3-g.pdf datasheet:

IPB108N15N3 G IPP111N15N3 GIPI111N15N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesV 150 VDS N-channel, normal levelR 10.8mDS(on),max (TO263) Excellent gate charge x R product (FOM)DS(on)I 83 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; Halogen free Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synchronous rectificationHalogen-free according to IEC61249-2-21Type IPB108N15N3 G IPP111N15N3 G IPI111N15N3 GPackage PG-TO263-3 PG-TO220-3 PG-TO262-3 Marking 108N15N 111N15N 111N15NMaximum ratings, at T =25 C, unless otherwise specifiedjParameter Symbol Conditions Value UnitI T =25 CContinuous drain current 83 AD CT =100 C59CI T =25 C332Pulsed drain current2) D,pulse CEAvalanc