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ipd65r380c62.1.pdf datasheet:

ipd65r380c62.1ipd65r380c62.1

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6650V CoolMOS C6 Power TransistorIPx65R380C6 Data SheetRev. 2.1, 2011-02-17Final Industrial & Multimarket650V CoolMOS C6 Power Transistor IPD65R380C6, IPI65R380C6IPB65R380C6, IPP65R380C6IPA65R380C61 DescriptionCoolMOS is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS C6 series combines the experience of the leading SJ MOSFET supplier with high classinnovation. The resulting devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. Features Extremely low losses due to very low FOM Rdson*Q

 

Keywords - ALL TRANSISTORS DATASHEET

 ipd65r380c62.1.pdf Design, MOSFET, Power

 ipd65r380c62.1.pdf RoHS Compliant, Service, Triacs, Semiconductor

 ipd65r380c62.1.pdf Database, Innovation, IC, Electricity

 

 
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