ipl60r085p7.pdf datasheet:

IPL60R085P7MOSFETThinPAK 8x8600V CoolMOS P7 Power TransistorThe CoolMOS 7th generation platform is a revolutionary technology forhigh voltage power MOSFETs, designed according to the superjunction(SJ) principle and pioneered by Infineon Technologies. The 600VCoolMOS P7 series is the successor to the CoolMOS P6 series. Itcombines the benefits of a fast switching SJ MOSFET with excellent easeof use, e.g. very low ringing tendency, outstanding robustness of bodydiode against hard commutation and excellent ESD capability.Furthermore, extremely low switching and conduction losses makeswitching applications even more efficient, more compact and muchcooler.FeaturesDrainPin 5 Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness Significant reduction of switching and conduction losses GatePin 1