ipp114n12n3g.pdf datasheet:

IPP114N12N3 GOptiMOSTM3 Power-TransistorProduct SummaryFeaturesVDS 120 V N-channel, normal levelRDS(on)max 11.4m Excellent gate charge x R product (FOM)DS(on)ID 75 A Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant; halogen free Qualified according to JEDEC1) for target application Ideal for high-frequency switching and synchronous rectificationType IPP114N12N3 GPackage PG-TO220-3Marking 114N12NMaximum ratings, at T 25 C, unless otherwise specifiedMaximum ratings, at T =25 C, unless otherwise specifiedjjParameter Symbol Conditions Value UnitI T =25 CContinuous drain current 75 AD CT =100 C53CI T =25 C300Pulsed drain current2) D,pulse CEAvalanche energy, single pulse I =75 A, R =25 120 mJAS D GSV20 VGate source voltage3) GS