ircz24 ircz24pbf.pdf datasheet:

PD - 9.615AIRCZ24HEXFET Power MOSFET Dynamic dv/dt RatingVDSS = 55V Current Sense 175C Operating TemperatureRDS(on) = 0.040 Fast Switching Ease of ParallelingID = 26A Simple Drive RequirementsDescriptionThird Generation HEXFETs from International Rectifier provide the designer withthe best combination of fast switching, ruggedized device, low on-resistance andcost-effectiveness.The HEXSence device provides an accurate fraction of the drain current throughthe additional two leads to be used for control or protection of the device. Thesedevices exhibit similar electrical and thermal characteristics as their IRF-seriesequivalent part numbers. The provision of a kelvin source connection effectivelyeliminates problems of common source inductance when the HEXSence isused as a fast, high-current switch in non current-sensing applications.TO-