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irf1010ns.pdf datasheet:

irf1010nsirf1010ns

PD - 94171IRF1010NSIRF1010NL Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating DVDSS = 55V 175C Operating Temperature Fast SwitchingRDS(on) = 11m Fully Avalanche RatedGDescriptionAdvanced HEXFET Power MOSFETs fromID = 85A International Rectifier utilize advanced processingStechniques to achieve extremely low on-resistance persilicon area. This benefit, combined with the fast switchingspeed and ruggedized device design that HEXFETpower MOSFETs are well known for, provides thedesigner with an extremely efficient and reliable devicefor use in a wide variety of applications.The D2Pak is a surface mount power package capable ofaccommodating die sizes up to HEX-4. It provides thehighest power capability and the lowest possible on-resistance in any existing surface mount package. The D

 

Keywords - ALL TRANSISTORS DATASHEET

 irf1010ns.pdf Design, MOSFET, Power

 irf1010ns.pdf RoHS Compliant, Service, Triacs, Semiconductor

 irf1010ns.pdf Database, Innovation, IC, Electricity

 

 
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