irf1404.pdf datasheet:

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1404IIRF1404FEATURESStatic drain-source on-resistance:RDS(on) 4.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 40 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 202 ADI Drain Current-Single Pulsed 808 ADMP Total Dissipation @T =25 333 WD CT Max. Operating Junction Temperature 175 jStorage Temperature -55~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(ch-c) 0.45Channel-to-ambient thermal resistance/WRth(ch-a) 62