irf1404.pdf datasheet:

PD -91896EIRF1404HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.004 Fast SwitchingG Fully Avalanche RatedID = 162A SDescriptionSeventh Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low on-resistance persilicon area. This benefit, combined with the fastswitching speed and ruggedized device design thatHEXFET power MOSFETs are well known for, providesthe designer with an extremely efficient and reliabledevice for use in a wide variety of applications.The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 watts. The low thermalTO-220ABresistance and low package cost of the TO-220co