irf1405.pdf datasheet:

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1405IIRF1405FEATURESStatic drain-source on-resistance:RDS(on) 5.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 55 VDSSV Gate-Source Voltage 20 VGSI Drain Current-Continuous 169 ADI Drain Current-Single Pulsed 680 ADMP Total Dissipation @T =25 330 WD CT Max. Operating Junction Temperature 175 jStorage Temperature -55~175 TstgTHERMAL CHARACTERISTICSSYMBOL PARAMETER MAX UNITChannel-to-case thermal resistance/WRth(ch-c) 0.45Channel-to-ambient thermal resistance/WRth(ch-a)